band gap

The spectrogram of the samples has optic reflective apexes and shows the photonic band gap effects.

锗反蛋白石的测试光谱图有明显的光学反射峰,表现出光子带隙效应.

The ADC core area is 2.0 mm 2 without band - gap and reference circuit.

整个ADC芯片 内核面积2.0平方毫米(不包括参考电压产生电路).

The absorption coefficient of the films reaches 4.6×104 cm - 1 and the band - gap is between 1.43 eV and 1.50 eV.

制备的CIGS多晶 薄膜在室温下的光学禁带宽度E_ g为1.43～1.50eV左右,光吸收系数达到4.6×10~4cm~( -1 ).

The higher the filling fraction, the stronger the influence of rod rotating on band gap.

插入体的填充率越高, 方柱转动对系统带隙的影响越大.

A novel photonic band gap ( PBG ) structure is presented in this paper.

提出一种新型微带光子带隙结构.

Photonic crystals are a new kind of materials with photonic band gap.

光子晶体是一种具有光子带隙的新型功能材料.

The surface wave band - gap characteristics for three typical curved EBG structures are studied in this paper.

用平面波法研究了椭圆钢柱与环氧树脂组成的二维三角晶格声子晶体的带隙结构.

The optical band gap in the films decreased with increasing Fe concentration.

薄膜的禁带宽度随掺杂浓度的增大而减小.

The stimulated emission from a two - level atom embedded in a photonic band - gap structure is studied.

采用全量子理论分析光子晶体中单个二能级原子的受激辐射.

The localized resonant modes present in the band gap of the quasi - periodical systems .

且在带隙范围内有局域 共振模 的出现.

Its band gap is about 2.45 eV, a better window material and transition layer material.

带隙约为2.45eV, 由于带隙大,是一种较好的窗口材料和过渡层材料.

The results indicate that photonic band gap appear in regions between two well separated resonance states.

结果表明声子带隙将出现在两个完全分离的共振态之间.

Zinc sulfide, an important wide band - gap semiconductor , has attracted much attention owing to its wide applications.

硫化锌是一种重要的宽带隙半导体材料, 因其特殊的光电性质已引起制备领域的关注.

It is important of applications of low band gap polymers to properties of their photoelectric devices.

低能带隙聚合物对光电器件具有重要的意义.

This paper introduces a supply voltage band - gap reference circuit which used a self - bias cascode current mirror.

因此介绍了一种采用自偏置低压共源共栅电流源的带隙基准电路结构,用两个电阻代替了偏置电路.